EMCORE Receives Patent for Semiconductor Device Separation Method
SOMERSET, N.J., July 31 -- EMCORE Corp., a provider of compound semiconductor technologies for global communications, announced it has received a patent for a semiconductor device separation technique for gallium nitride-based and other materials grown on sapphire substrates.
The new technique uses a patterned laser projection to separate the processed wafer into several thousand individual devices. EMCORE said the new method -- which has been employed in a high-volume LED manufacturing production facility for over a year -- will expedite manufacturing of GaN-based blue and green LEDs and improve GaN materials device yields, and it will have a significant impact on the cost and manufacturability of all devices on sapphire substrate.
Reuben F. Richards Jr., president and CEO of EMCORE, said, "We are currently discussing licensing the technique with a number of major LED manufacturuers who are very enthusiastic about the prospect of improving the economics of LED production."
LATEST NEWS
- Exail Signs LLNL Contract, Partners with Eelume
Apr 26, 2024
- Menlo Moves U.S. HQ: Week in Brief: 4/26/2024
Apr 26, 2024
- Optofluidics Platform Keys Label-, Amplification-Free Rapid Diagnostic Tool
Apr 25, 2024
- DUV Lasers Made with Nonlinear Crystals Enhance Lithography Performance
Apr 25, 2024
- Teledyne e2v, Airy3D Collaborate on 3D Vision Solutions
Apr 24, 2024
- One-Step Hologram Generation Speeds 3D Display Creation
Apr 24, 2024
- Innovation Award Winners for Laser Technology Honored in Aachen
Apr 23, 2024
- Intech 2024: AI Arrives on the Shop Floor
Apr 22, 2024