Ferdinand Braun Institute Adds Aixtron System for GaN LEDs

Aixtron AG of Aachen, Germany, said it has received an order from the Ferdinand Braun Institute for High Frequency Technology (FBH) in Berlin for an AIX 2600G3HT Planetary Reactor system with an 8x4-in. capacity for growing semiconductor materials. The FBH will use the multiwafer MOCVD (metallorganic chemical vapor deposition) system to grow gallium nitride (GaN) -based UV-LEDs, prepare high-temperature AIN (aluminium nitride) thin films with high crystalline quality, and conduct other research and development activities in laser diodes and GaN-HFETs (heterostructure field-effect transistors), said Markus Weyers, PhD, head of the FBH materials technology department. The FBH currently has 8x3-in. and 11x2 -in. capacity Aixtron systems in operation.