Optical Lithography Aims for 157 nm

Doug Anberg and Warren Flack

Reducing the design rules of seminconductor devices enables smaller components and represents the most economical means for the industry to reduce costs while improving device performance. This economic driver is at the root of each advancement in optical lithography and continues to produce smaller and smaller critical dimensions.

Phase-shift mask techniques and optical proximity correction have allowed the semiconductor industry to extend 248-nm KrF technology - first introduced for the 250-nm node - down to sub- 180-nm design rules. Similarly, industry leaders expect that 193-nm ArF technology, entering production this year, will extend below 120 nm...