Spectrophotometry Takes Measure of Deep-UV Lithography
As lithography's optical components evolve to the next generation, so will the spectrophotometric methods used to analyze them.
High-performance deep-UV spectrophotometry played a vital role in the research and development of 193-nm lithography. Pushed further, it will do the same for 157-nm lithography by providing optical analysis of the projection lenses, illumination optics and photomasks being developed.
Hence, demand for high-performance deep-UV spectrophotometers is beginning to increase. Based upon trends witnessed over the past 20 years, it is likely that 64-Gb DRAMS with 70-nm features will be in production by 2009. But development tools will be required much earlier. Before chip manufacturers can implement the 157-nm lithography steppers capable of producing such features, they will require the means to develop and characterize the optical components used in these tools…
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