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Microfacet Laser Displays 0.3-mW, 401-nm Operation

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Daniel S. Burgess

Group III nitrides such as AlN, GaN and InN feature wide, direct bandgaps that make them particularly useful for ultraviolet and visible laser diodes. However, the conventional mirror-fabrication techniques tend to produce facets that are neither smooth, parallel nor vertical to the substrate. Now a team at NTT Basic Research Laboratories in Atsugi, Japan, has combined dry etching and a subsequent overgrowth process to construct an InGaN laser with smooth, vertical mirror facets. The researchers employed electron cyclotron resonance dry etching and photolithography to inscribe a hexagonal...Read full article

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    Published: February 2002
    Basic ScienceindustrialResearch & TechnologyTech Pulse

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