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Navy Gives JMAR $3.4 M for X-Ray Proximity Masks
Apr 2003
SAN DIEGO, April 23 -- JMAR Technologies Inc., a developer of advanced lasers, collimated plasma lithography (CPL) systems and semiconductor production services, announced that its Systems Division in Burlington, Vt., has been awarded an additional $3.4 million in funding from the Naval Air Warfare Center in Patuxent River, Md., to procure sub-100 nm geometry next-generation lithography masks needed to produce advanced semiconductors using JMAR's new CPL system, which is currently undergoing testing at the company's Burlington facility.

The award, funded by the Defense Advanced Research Projects Agency, extends by a year the mask production program initiated in May 2002. The x-ray masks procured through this program are being used to develop and produce high-performance gallium arsenide (GaAs) millimeter wave integrated circuits (MMICs). MMICs are used in advanced, high-performance military and commercial radar, communication and space-borne applications, and in automotive and high-speed Internet communications.

JMAR has subcontracted with the IBM Microelectronics Division in Essex Junction, Vt., to produce and deliver masks for this phase of the contract, which ends March 31, 2004.

For more information, visit:

advanced laserscollimated plasma lithographyCommunicationsCPLdefensegallium arsenideindustrialJmar Technologiesmillimeter wave integrated circuitsNews & Featuresnext-generation lithographysemiconductors using JMAR's new CPL systemx-ray masks

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