ST. PAUL, Minn., July 8 -- The University of California Santa Barbara (UCSB) and Veeco Instruments Inc. have signed a collaborative agreement whereby UCSB will transfer molecular beam epitaxy (MBE) growth processes for wireless and optical telecommunications devices to Veeco's new epitaxial Process Integration Center (PIC). Under the agreement, UCSB will demonstrate the growth processes and provide Veeco PIC scientists with the "recipes" required to grow nonproprietary versions of the following device structures: carbon-doped InP HBTs, metamorphic HBTs (InAlGaAs), 980 nm edge-emitting lasers, InP/InAlGaAsP 1.5 mm edge-emitting lasers and 980 nm vertical cavity surface-emitting lasers, VCSELs. "We are excited to get these processes and training from one of the world's leading engineering universities," said Hwa Cheng, director of the PIC. "These processes were developed at UCSB on our single-wafer GEN II R&D systems, and this agreement will let us duplicate them on the PIC's multiwafer GEN200 production systems." Veeco Instruments provides solutions for nanoscale applications in the semiconductor, data storage, telecommunications/wireless and scientific research markets. Its MBE operations are in St. Paul. For more information, visit: www.veeco.com