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Kyma Technologies Awarded Federal Contracts
Jul 2003
RESEARCH TRIANGLE, N.C., July 23 -- Kyma Technologies Inc., a supplier of gallium nitride (GaN) substrates for the optoelectronics, communications and microelectronics industries, has been awarded four contracts totaling $1 million from the US Department of Defense and the Department of Energy to support its development of microelectronic and optoelectronic applications of GaN substrates.

"Numerous applications in the microelectronic and optoelectronic industries are made possible only through the use of Kyma's unique GaN technology," CEO Ed Pupa said. "These contracts will allow us to refine our GaN technology for the companies that rely on it."

High-purity GaN substrates allow GaN-based device manufacturers to eliminate processing steps and improve device quality over those grown on other substrates, such as sapphire and silicon carbide. GaN substrates are exactly matched in lattice-constant and thermal expansion properties for epitaxial growth of doped GaN layers needed for fabrication of GaN-based devices.

Examples of GaN-based device applications that will be enhanced by the use of GaN substrates include short-wavelength semiconductor lasers for high-density optical storage, high-brightness ultraviolet light-emitting diodes for solid-state lighting, advanced high-frequency communication components for wireless applications and high-power semiconductor devices for wireless infrastructure and radar applications.

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