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Hamamatsu Corp. - Earth Innovations LB 2/24

Dual Microscopes Illuminate Electronic Switching Speeds

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GAITHERSBURG, Md., Sept. 29 -- Although silicon is still the mainstay of the semiconductor industry, a new method may put materials like gallium nitride and silicon carbide into wider use in scanning semiconductors for defects. Such advanced semiconductor materials can operate at higher voltages and provide faster switching speeds, an important characteristic in determining how fast a semiconductor circuit can process information.

Joseph Kopanski, a researcher for the National Institute of Standards and Technology, and Korean guest researcher G. H. Buh combined an atomic force microscope (AFM) with a scanning capacitance microscope, then added custom software and a simple on/off switch for the AFM’s positioning laser. The result is an instrument that can measure how fast a material generates electrical charges and then map those speeds in sections, at least for gallium nitride, that are only about 100 nanometers square. Current methods for measuring switching speed (carrier lifetime) produce only bulk averages.

According to Joseph Kopanski, the system allows quick scanning of semiconductor wafers for defects that otherwise may not be found until an expensive device has already been built on the material. Most defects in semiconductors (i.e., sections with missing atoms) are presumed to slow down the speed that charges move through a material. Kopanski said further research using the new technique should determine if this assumption is correct. A patent application is pending on the technique.

The work is described in the the Sept. 22 issue of Applied Physics Letters.

For more information, visit: www.nist.gov

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Published: September 2003
Glossary
atomic force microscope
An atomic force microscope (AFM) is a high-resolution imaging and measurement instrument used in nanotechnology, materials science, and biology. It is a type of scanning probe microscope that operates by scanning a sharp tip (usually a few nanometers in diameter) over the surface of a sample at a very close distance. The tip interacts with the sample's surface forces, providing detailed information about the sample's topography and properties at the nanoscale. Key features and principles of...
gallium nitride
Gallium nitride (GaN) is a compound made up of gallium (Ga) and nitrogen (N). It is a wide-bandgap semiconductor material that exhibits unique electrical and optical properties. Gallium nitride is widely used in the production of various electronic and optoelectronic devices, including light-emitting diodes (LEDs), laser diodes, power electronics, and high-frequency communication devices. Key points about gallium nitride (GaN): Chemical composition: Gallium nitride is a binary compound...
atomic force microscopeBasic Sciencegallium nitrideMicroscopyNational Institute of Standards and TechnologyNews & Featuressemiconductors

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