DURHAM, N.C., Dec. 24 -- Cree Inc. announced it has developed a new class of gallium nitride (GaN) power transistors that produce a continuous wave (CW) power density of 32 W/mm and 55 percent power added efficiency (PAE) at 4 GHz. Cree said these same devices produced a CW power density of 30 W/mm and 50 percent PAE at a higher frequency of 8 GHz. Cree said it has demonstrated GaN high-electron mobility transistor (HEMT) power transistors with almost three times the power density and five points higher PAE than previously demonstrated in the industry. The improvements were developed in...Read full articleRelated content from Photonics MediaArticlesPorotech Taps GaN-on-silicon Micro-LED Foundry PartnerMicro-LED technology developer Porotech has partnered with Taiwan’s Powerchip Semiconductor Manufacturing Corp. 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