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Cree to Acquire GaN Substrate and Epitaxy Business

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DURHAM, N.C., March 25 -- Cree Inc. announced today it has entered into a definitive agreement to acquire the gallium nitride (GaN) substrate and epitaxy business of Advanced Technology Materials Inc., a subsidiary of Danbury, Conn.-based ATMI Inc., through an asset purchase transaction. Under the terms of the agreement, Cree will purchase the assets of the business, including related intellectual property, fixed assets and inventory, in exchange for cash. Cree said it expects the acquisition, which is subject to certain third party approvals and other customary conditions, will close during...Read full article

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    Published: March 2004
    Glossary
    gallium nitride
    Gallium nitride (GaN) is a compound made up of gallium (Ga) and nitrogen (N). It is a wide-bandgap semiconductor material that exhibits unique electrical and optical properties. Gallium nitride is widely used in the production of various electronic and optoelectronic devices, including light-emitting diodes (LEDs), laser diodes, power electronics, and high-frequency communication devices. Key points about gallium nitride (GaN): Chemical composition: Gallium nitride is a binary compound...
    Advanced Technology MaterialsATMICreegallium nitrideGaNLight SourcesNews & Featuressilicon carbideLEDs

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