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Polycrystalline GermaniumEnables Near-IR Photodetectors Integrated with Silicon CMOS Electronics

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A near-IR imaging chip based on polycrystalline germanium on silicon opens new frontiers for integrated optoelectronics.

Lorenzo Colace, Gianlorenzo Masini, Valentino O. Cencelli,
Francesco de Notaristefaniand Gaetano Assanto, Nonlinear Optics and OptoElectronics Laboratory, Università Roma Tre

In the past two decades, SiGe has been the material of choice for the development of near-IR (0.7 to 2 µm) optoelectronic devices based on silicon, and several groups have developed high-performance near-IR photodetectors on Si substrates.1 Nevertheless, the gap between engineering a good device and achieving its monolithic integration with very large scale integrated electronics on Si was not overcome until recently.2 Following the pioneering work of R. People3 and T.P. Pearsall,4 SiGe (i.e., alloys, multilayers, superlattices, etc., that combine both of these group-IV semiconductors)...Read full article

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    Published: December 2004
    CommunicationsenergyFeaturesnear-IRoptoelectronic devicesSensors & DetectorsSiGesilicon

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