Researchers at Semiconductor Laser International Corp. in Binghamton, N.Y., recently demonstrated an 808-nm, high-power semiconductor diode laser with an efficiency of 56 percent operating at 25 °C. The company's engineers altered the design of the diode and improved crystal growth quality. The low optical loss inside the laser diode increased the efficiency and output power level. The high-power diode could find applications in medicine, telecommunications and optical data storage.