Goodrich Corp. of Charlotte, N.C., has been awarded a contract from the US Army to develop an InGaAs detector array for use in 1920 × 1080-pixel, short-wavelength infrared (SWIR) night-vision cameras. The project will further the development of dual-wavelength cameras that can simultaneously produce images in the visible and SWIR regions.Goodrich’s Optical and Space Systems team in Princeton, N.J., will design a readout integrated circuit architecture with a 12-µm pixel pitch to create a tiny array with high resolution. This technology minimizes the weight and size of the optical assembly for long-range imaging. The group also will work on improving the visible response from the conventional InP substrate removal process to produce higher device yields and higher sensitivity in dark or low-light conditions. The circuit architecture and substrate-removed InGaAs photodiodes will be integrated into the new imager, which will have the potential for commercial and defense applications in such areas as covert surveillance and optical coherence tomography.