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Hamamatsu Corp. - Earth Innovations LB 2/24

Toshiba FET Tops Ku-band

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TOKYO, Oct. 10, 2007 -- Toshiba Corp. announced this week it has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12 to 18 GHz) frequency range with an output power of 65.4 at 14.5 GHz, the highest performance level reported at that frequency band. The main application of the new transistor will be in base stations for satellite microwave communications, which carry high-capacity signals, including high-definition broadcasts. Toshiba said it plans to start sample shipments of the FET by the end of 2007 and to begin mass production by the end of March. "Advances in...Read full article

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    Published: October 2007
    Glossary
    gallium nitride
    Gallium nitride (GaN) is a compound made up of gallium (Ga) and nitrogen (N). It is a wide-bandgap semiconductor material that exhibits unique electrical and optical properties. Gallium nitride is widely used in the production of various electronic and optoelectronic devices, including light-emitting diodes (LEDs), laser diodes, power electronics, and high-frequency communication devices. Key points about gallium nitride (GaN): Chemical composition: Gallium nitride is a binary compound...
    photonics
    The technology of generating and harnessing light and other forms of radiant energy whose quantum unit is the photon. The science includes light emission, transmission, deflection, amplification and detection by optical components and instruments, lasers and other light sources, fiber optics, electro-optical instrumentation, related hardware and electronics, and sophisticated systems. The range of applications of photonics extends from energy generation to detection to communications and...
    transistor
    An electronic device consisting of a semiconductor material, generally germanium or silicon, and used for rectification, amplification and switching. Its mode of operation utilizes transmission across the junction of the donor electrons and holes.
    AIGaNCommunicationsFETfiber opticsfield effect transistorgallium nitrideGaNHEMKu-bandNews & Featuresphotonicssatellite microwaveSiCToshibatransistor

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