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DataRay Inc. - ISO 11146-Compliant Laser Beam Profilers

Defect-Free Structures May Pave the Way to GaAs Lasers

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Nanoscale needles emit high brightness when optically pumped.

Lynn M. Savage

If you are an optoelectrical engineer trying to create semiconductor devices that emit light, here is some advice: Don’t let zinc blende get into your wurtzite. In recent years, gallium arsenide has gained traction as the basis for optoelectronic devices in lieu of silicon, which does not emit light well. Growing nanoscale crystals of GaAs, however, is problematic because most techniques allow the formation of zinc blende (cubic) and wurtzite (hexagonal) crystalline in the same structure. Defects at the boundaries between the two forms reduce the efficacy of the resulting GaAs nanoscale...Read full article

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    Published: July 2008
    Basic Sciencegallium arsenideMicroscopyoptoelectricalResearch & TechnologyTech Pulsezinc

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