Close

Search

Search Menu
Photonics Media Photonics Buyers' Guide Photonics EDU Photonics Spectra BioPhotonics EuroPhotonics Industrial Photonics Photonics Showcase Photonics ProdSpec Photonics Handbook
More News
share
Email Facebook Twitter Google+ LinkedIn Comments

Bell Labs Researchers Report GaAs Advance

Photonics.com
Mar 1999
MURRAY HILL, N.J, March 22 -- Bell Labs researchers have grown a single crystal of gadolinium oxide on a gallium arsenide semiconductor. Because the interface is perfectly smooth, the material could prove to be the best insulating layer yet for gallium arsenide-based metal oxide semiconductor field effect transistors (MOSFETs), which currently are not commercially viable. The researchers created the gadolinium oxide crystal by using molecular beam epitaxy to grow one molecular layer at a time on the gallium arsenide.

News & Features

Comments
Terms & Conditions Privacy Policy About Us Contact Us
back to top

Facebook Twitter Instagram LinkedIn YouTube RSS
©2017 Photonics Media
x We deliver – right to your inbox. Subscribe FREE to our newsletters.