Close

Search

Search Menu
Photonics Media Photonics Buyers' Guide Photonics EDU Photonics Spectra BioPhotonics EuroPhotonics Industrial Photonics Photonics Showcase Photonics ProdSpec Photonics Handbook
More News
share
Email Facebook Twitter Google+ LinkedIn Comments

Cleaved Gallium Nitride Proposed for Blue Laser Diodes

Photonics Spectra
Jul 1999
Researchers from Technische Universitat Berlin have reported observing optically excited stimulated emission of cleaved c-GaN samples grown by molecular beam epitaxy. They report that the threshold intensity for excitation from c-GaN layers is lower than that for c-GaN grown using metallorganic chemical vapor deposition.

The hope is that the material may be useful for cleaved cavity blue-light-emitting laser diodes. Because c-GaN layers share a cleavage plane with GaAs, they are thought to be suitable for making laser cavities with cleaved facets. The group reported its findings in the April 5 issue of Applied Physics Letters.

Research & TechnologyTech Pulselasers

Comments
Terms & Conditions Privacy Policy About Us Contact Us
back to top

Facebook Twitter Instagram LinkedIn YouTube RSS
©2018 Photonics Media, 100 West St., Pittsfield, MA, 01201 USA, info@photonics.com
x Subscribe to Photonics Spectra magazine - FREE!
We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.