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QDs in microcavities advance blue diode lasers

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Dr. Jörg Schwartz, [email protected]

BREMEN, Germany – Newly developed monolithically integrated nitride laser microcavities that incorporate quantum dots (QDs) could be an important step in making better blue and green diode lasers as well as single-photon sources. A team of solid-state physicists at the University of Bremen were able to introduce InGaN quantum dots into fully epitaxial monolithic microcavities that they grew by metallorganic vapor phase epitaxy. They then added pillar-shaped microcavities by focused ion-beam etching. Their impact was measurable via microphotoluminescence measurements, which showed discrete resonator modes...Read full article

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    Published: October 2010
    Glossary
    gallium nitride
    Gallium nitride (GaN) is a compound made up of gallium (Ga) and nitrogen (N). It is a wide-bandgap semiconductor material that exhibits unique electrical and optical properties. Gallium nitride is widely used in the production of various electronic and optoelectronic devices, including light-emitting diodes (LEDs), laser diodes, power electronics, and high-frequency communication devices. Key points about gallium nitride (GaN): Chemical composition: Gallium nitride is a binary compound...
    Blue Raydiode lasersDr Kathrin SebaldEuro NewsEuropefocussed ion-beam etchinggallium nitrideGaNInGaNJoerg Schwartzlight confinementlight-matter interactionmetal-organic vapour phase epitaxymicro cavitymicrophotoluminescencemicropillarNewsphotonic crystalPurcell effectquantum dotsemiconductor lasersUniversität BremenUniversity of BremenVCSELLasersLEDs

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