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FEI, CEA-Leti Team on Semiconductor Tech

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Scientific instruments maker FEI and CEA-Leti, a government-funded technological research organization based in Grenoble, France, have signed a three-year agreement to characterize advanced semiconductor materials for the 22-nm technology node and beyond. CEA-Leti, working with its partners on the MINATEC micro- and nanotechnology innovation campus based in Grenoble, will apply its expertise in holography to improve the sensitivity of dopant profiling. FEI of Hillsboro, Ore., will provide nanobeam diffraction technology to measure changes in strain and other crystallographic parameters with its Titan scanning transmission electron microscope. The goal is to advance the technology past the critical technical roadblocks facing the semiconductor industry as it tries to push integrated circuit devices past the 22-nm barrier.

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Published: April 2011
Glossary
holography
Holography is a technique used to capture and reconstruct three-dimensional images using the principles of interference and diffraction of light. Unlike conventional photography, which records only the intensity of light, holography records both the intensity and phase information of light waves scattered from an object. This allows the faithful reproduction of the object's three-dimensional structure, including its depth, shape, and texture. The process of holography typically involves the...
22-nmAmericasBusinessCEA-Leticrystallographicdopant profilingEuropeFEIFranceholographyImaginglight speedMicroscopyMINATECnanobeam diffractionS/TEMsemiconductorsstrain measurementTest & MeasurementTitan scanning transmission electron microscopeUS

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