Bridgelux Demonstrates New Level for GaN-on-Si LEDs
LIVERMORE, Calif., Aug. 23, 2011 — LED light technology and solutions provider Bridgelux Inc. announced it has broken its previous industry record for highest lumen per watt values for gallium nitride on silicon (GaN-on-Si).
Using proprietary buffer layer technology, the company demonstrated growth of crack-free GaN layers on 8-in. silicon wafers without bowing at room temperature.
The company said its LED performance levels are comparable to today’s state-of-the-art sapphire-based LEDs. Its cool-white LEDs showed efficiencies as high as 160 lm/W at a correlated color temperature of 4350 K. Warm-white LEDs constructed from the GaN-on-Si chips delivered 125 lm/W at a color temperature of 2940 K and color rendering index of 80.
By growing GaN on larger, low-cost silicon wafers that are compatible with modern semiconductor manufacturing, the company believes that it can deliver a 75% improvement in cost over current approaches.
For more information, visit: www.bridgelux.com