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Unique Laser Ion Source Produces Semiconductors

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WARSAW, Poland, Oct. 21, 2011 — A unique laser ion source has been built that is equipped with a special system for accelerating ions to a chosen energy and for eliminating admixtures. This device has been used to produce samples of a new generation of semiconductors: a layer of silica in which germanium nanocrystals have been formed. For ion implantation — that is, “hammering” ions into the surface layer of the material — conventional ion accelerators commonly are used. Laser ion sources, though simpler, cheaper and more universal, emit wide-energy ions usually accompanied by some...Read full article

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    Published: October 2011
    admixtures laser ion sourcesenergyEuropegermanium nanocrystalsindustrialInstitute of Plasma Physics and Laser Microfusionion acceleratorsion implantationion implementationion source with electrostatic systemIPPLMlaser ion sourcelaser ion sources industrial applicationslaser-induced implantationnext-generation semiconductorPolandResearch & Technologysemiconductor advancesemiconductor researchsystem for accelerating ionsLasers

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