Molecular beam epitaxy supplier Riber SA of Bezons, France, and R&D company imec of Louvain, Belgium, will continue work on epitaxy process technologies for next-generation III-V CMOS devices. In the new project, Riber’s 300-mm ultrahigh-vacuum (UHV) chamber, equipped with in situ tools for surface analysis and clustered with 300-mm silicon CMOS production equipment, will be evaluated for the production of CMOS devices based on high-mobility germanium and III-V channels. Through the collaboration, imec said it can integrate the power of UHV systems into state-of-the-art semiconductor production equipment on large-diameter wafers.