Search Menu
Photonics Media Photonics Buyers' Guide Photonics EDU Photonics Spectra BioPhotonics EuroPhotonics Industrial Photonics Photonics Showcase Photonics ProdSpec Photonics Handbook
More News
Email Facebook Twitter Google+ LinkedIn Comments

Soitec, Silian to Develop GaN Wafers for LEDs

Sep 2012
Soitec (Euronext) of Bernin, France, and Chongqing Silian Optoelectronics Science & Technology Co. Ltd. (Silian) of China will jointly develop gallium nitride (GaN) template wafers to reduce LED manufacturing costs. The partnership agreement aims at validating the manufacturability and enabling the commercialization of GaN template wafers using Silian’s sapphire substrates and Soitec’s hydride vapor phase epitaxy technology. They plan to begin sampling the template wafers this year.

The technology of generating and harnessing light and other forms of radiant energy whose quantum unit is the photon. The science includes light emission, transmission, deflection, amplification and detection by optical components and instruments, lasers and other light sources, fiber optics, electro-optical instrumentation, related hardware and electronics, and sophisticated systems. The range of applications of photonics extends from energy generation to detection to communications and...
André-Jacques Auberton-HervéAsia-PacificChantal ArenaChinaChina Silian Instrument Group Co.Chongqing Silian Optoelectronics Science & Technology Co.ConsumerEuro NewsEuronextEuropeFrancegallium nitride template wafersGaNGaN template wafersHVPEhydride vapor phase epitaxyindustrialLED manufacturing costslight emitting diodeslight sourceslighting industrymetal organic vapor phase epitaxyMOVPENewsphotonicssapphire substratessemiconductor materialsSilianSoitecSoitec Phoenix Labstemplate wafersLEDs

Terms & Conditions Privacy Policy About Us Contact Us
back to top

Facebook Twitter Instagram LinkedIn YouTube RSS
©2018 Photonics Media
x Subscribe to EuroPhotonics magazine - FREE!