QEOS Launches High-Speed Light-Emitting Products
MELAKA, Malaysia, April 17, 2013— Quantum Electro Opto Systems Sdn. Bhd. (QEOS) has launched its first commercial OEM/ODM products based on its patented high-speed light-emitting technology known as tilted charge dynamics, the company said last week.
QEOS is headquartered in Malaysia with a US office in Cupertino, Calif. The company was founded in 2008 by Dr. Gabriel Walter (CEO) and University of Illinois professors Nick Holonyak Jr. and Milton Feng, inventors of the tilted charge light-emitting transistor. Professor Holonyak invented the first practically useful visible LED in 1962 and has been called the father of the light-emitting diode.
(left) The proprietary QEOS transmitter optical full assembly (TOFA). (right) Size comparison between a current optical transmitter solution and the QEOS TOFA. Courtesy of PRNewsFoto/Quantum Electro Opto Systems Sdn. Bhd.
Tilted charge dynamics enables the development of products that "are a fraction of the size, power and cost of traditional laser-based products with the comparable functionality" for short-distance optical transmission, Walter said.
"It's incredible to realize this technology features the world's fastest LED," Walter said. "It's ten times faster than the traditional LEDs in the market."
The company is launching the QEOS optical transceiver kit, which includes its transmitter optical full assembly (TOFA) designed to operate with QEOS's receiver optical full assembly (ROFA). It provides a low-power product-ready 3.5 Gb/s for distances up to 100 m and will soon be available for sampling, QEOS said.
A higher-speed QEOS TOFA, an ultralow-power consumption, high-speed optical transmitter operating at up to 6.5 GHz (designed for 10-Gb/s applications) will be available later this year.
For more information, visit: www.qeosystems.com
- An electronic device consisting of a semiconductor material, generally germanium or silicon, and used for rectification, amplification and switching. Its mode of operation utilizes transmission across the junction of the donor electrons and holes.
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