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Inorganic Semiconductors Guide New Optoelectronic Devices

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SEOUL, South Korea, Sept. 22, 2014 — Inorganic compound semiconductors could potentially replace those developed with organic materials. A research team from Seoul National University (SNU) has grown gallium nitride (GaN) microrods on graphene substrates, which may ultimately lead to the creation of transferrable LEDs, enabling the fabrication of bendable and stretchable optoelectronics devices. The very stable and inactive surface of graphene offers a small number of nucleation sites for GaN growth, according to the researchers. The growth of GaN micro-rods on graphene substrates could lead to bendable,...Read full article

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    Published: September 2014
    Glossary
    gallium nitride
    Gallium nitride (GaN) is a compound made up of gallium (Ga) and nitrogen (N). It is a wide-bandgap semiconductor material that exhibits unique electrical and optical properties. Gallium nitride is widely used in the production of various electronic and optoelectronic devices, including light-emitting diodes (LEDs), laser diodes, power electronics, and high-frequency communication devices. Key points about gallium nitride (GaN): Chemical composition: Gallium nitride is a binary compound...
    Asia-Pacificenergygallium nitrideGaNgrapheneinorganic semiconductorsLight SourcesMaterialsMOCVDOpticsResearch & TechnologySeoul National UniversitySNUmicro-rodsmetal/organic chemical vapor depositionLEDs

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