Materials and optoelectronic component manufacturer II-VI Inc. has completed the first phase of a joint research program with the University of South Florida (USF) to develop a new technology platform using thin-film diamond on silicon that will enable next-generation, high-speed electronic components in 5G wireless handsets. “II-VI is a leader in engineered materials and thin-film technologies for communications,” said Wen-Qing Xu, general manager of platform technology development and incubation at II-VI. “Our work with USF accelerates the development timelines and will enable us to be ready in time to serve the market for 5G wireless components.” The new thin-film diamond on silicon technology platform will add to II-VI's portfolio of gallium arsenide and silicon carbide engineered materials for high speed wireless applications. Joint research activities were partly funded by the Matching Grant Research Program (MGRP) from the Florida High Tech Corridor Council. Activities included the design, modeling, fabrication and characterization of prototype devices. “Our research team at USF was able to leverage our area of expertise in micromachined thin-film diamond on silicon to rapidly converge on a technical solution for II-VI,” said Jing Wang, associate professor of electrical engineering at USF. “We acknowledge MGRP’s support for this program along with a dozen others in recent years.” II-VI develops products for diversified applications in the industrial, optical communications, military, life sciences, semiconductor equipment and consumer markets. The Florida High Tech Corridor Council was established by the Florida Legislature in 1996 as an economic development initiative of USF, the University of Central Florida and the University of Florida.