Search Menu
Photonics Media Photonics Buyers' Guide Photonics EDU Photonics Spectra BioPhotonics EuroPhotonics Industrial Photonics Photonics Showcase Photonics ProdSpec Photonics Handbook
More News
Email Facebook Twitter Google+ LinkedIn Comments

AIXTRON, Yale to Research GaN Technology
Feb 2002
AACHEN, Germany & NEW HAVEN, Conn., Feb. 28 -- Semiconductor epitaxial equipment supplier AIXTRON AG announced it has received a contract from Yale University for an AIX 200/4 RF-S MOCVD system, and for joint cooperation in the research and development of GaN technology for novel devices and structures for opto-electronic applications based on AIXTRON's HeteroWafer technology.

News & Features

Terms & Conditions Privacy Policy About Us Contact Us
back to top
Facebook Twitter Instagram LinkedIn YouTube RSS
©2019 Photonics Media, 100 West St., Pittsfield, MA, 01201 USA,

Photonics Media, Laurin Publishing
x We deliver – right to your inbox. Subscribe FREE to our newsletters.
We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.