CST Global Begins Heterostructure Laser Diode Production Capability on MOCVD Reactor
GLASGOW, Scotland, Oct. 31, 2018 — Chip and component developer CST Global Ltd. has begun developing a buried heterostructure (BH) laser diode production capability on its commercial, metal-organic chemical vapor deposition (MOCVD) reactor.
BH lasers suit many silicon photonics applications, including passive optical network (PON) and quantum sensing markets. The active layers of BH lasers are coated with an indium phosphide epitaxial overgrowth layer applied by the MOCVD machine, creating a special semiconductor structure and providing optical and electrical confinement. It also offers high thermal performance, optimal beam shapes, low noise, and semiconductor and optical amplification.
CST Global develops, manufactures, and sells cutting-edge chips, components, modules, and subsystems based on proprietary advanced semiconductor technology in microwave, millimeter wave, and optical semiconductors.
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