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Cree Unveils SiC Substrate Fabrication Method
Jun 2003
DURHAM, N.C., June 27 -- Cree Inc. said it has demonstrated the capability of producing a 100 mm 4H semi-insulating silicon carbide (SiC) substrate, which it says is a milestone in the advancement of single crystal silicon carbide and a key to future production of SiC and gallium nitride (GaN) RF components and systems.
The company presented its findings at the 45th Electronic Materials Conference in Salt Lake City, Utah, this week. It said the increased surface area of these larger wafers should allow it to almost double the number of devices on each wafer, versus current production on Cree's three-inch SiC HPSI wafers.

Cree makes blue, green and ultraviolet light-emitting diodes, near UV lasers, radio frequency (RF) and microwave devices and power switching devices. Applications include solid state illumination, optical storage, wireless infrastructure and power switching.

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Cree Inc.Electronic Materials ConferenceNews & FeaturesSiCsilicon carbide substratesingle crystal silicon carbide

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