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FEI, CEA-Leti Team on Semiconductor Tech
Feb 2011
HILLSBORO, Ore., and GRENOBLE, France, Feb. 24, 2011 — Oregon-based scientific instruments maker FEI and CEA-Leti, a French government-funded technological research organization, signed a three-year agreement to characterize advanced semiconductor materials for the 22-nm technology node and beyond, the companies announced this week.

CEA-Leti, working with its partners on the MINATEC micro- and nanotechnology innovation campus based in Grenoble, will apply its expertise in holography to improve the sensitivity of dopant profiling, while FEI will provide advanced nanobeam diffraction technology to measure changes in strain and other crystallographic parameters with its Titan scanning transmission electron microscope (S/TEM). The goal is to advance the technology past critical technical roadbacks facing the semiconductor industry as it tries to push integrated circuit devices past the 22-nm barrier.

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The optical recording of the object wave formed by the resulting interference pattern of two mutually coherent component light beams. In the holographic process, a coherent beam first is split into two component beams, one of which irradiates the object, the second of which irradiates a recording medium. The diffraction or scattering of the first wave by the object forms the object wave that proceeds to and interferes with the second coherent beam, or reference wave at the medium. The resulting...
22-nmAmericasBusinessCEA-Leticrystallographicdopant profilingEuropeFEIFranceholographyimagingMicroscopyMINATECnanonanobeam diffractionResearch & TechnologyS/TEMsemiconductorstrain measurementTest & MeasurementTitan scanning transmission electron microscopeUS

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