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FEI, CEA-Leti Team on Semiconductor Tech

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Scientific instruments maker FEI and CEA-Leti, a government-funded technological research organization based in Grenoble, France, have signed a three-year agreement to characterize advanced semiconductor materials for the 22-nm technology node and beyond. CEA-Leti, working with its partners on the MINATEC micro- and nanotechnology innovation campus based in Grenoble, will apply its expertise in holography to improve the sensitivity of dopant profiling. FEI of Hillsboro, Ore., will provide nanobeam diffraction technology to measure changes in strain and other crystallographic parameters with its Titan scanning transmission electron microscope. The goal is to advance the technology past the critical technical roadblocks facing the semiconductor industry as it tries to push integrated circuit devices past the 22-nm barrier.

Photonics Spectra
Apr 2011
The optical recording of the object wave formed by the resulting interference pattern of two mutually coherent component light beams. In the holographic process, a coherent beam first is split into two component beams, one of which irradiates the object, the second of which irradiates a recording medium. The diffraction or scattering of the first wave by the object forms the object wave that proceeds to and interferes with the second coherent beam, or reference wave at the medium. The resulting...
22-nmAmericasBusinessCEA-Leticrystallographicdopant profilingEuropeFEIFranceholographyimaginglight speedMicroscopyMINATECnanobeam diffractionS/TEMsemiconductorsstrain measurementTest & MeasurementTitan scanning transmission electron microscopeUS

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