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Ferdinand Braun Institute Adds Aixtron System for GaN LEDs
May 2008
Aixtron AG of Aachen, Germany, said it has received an order from the Ferdinand Braun Institute for High Frequency Technology (FBH) in Berlin for an AIX 2600G3HT Planetary Reactor system with an 8x4-in. capacity for growing semiconductor materials. The FBH will use the multiwafer MOCVD (metallorganic chemical vapor deposition) system to grow gallium nitride (GaN) -based UV-LEDs, prepare high-temperature AIN (aluminium nitride) thin films with high crystalline quality, and conduct other research and development activities in laser diodes and GaN-HFETs (heterostructure field-effect transistors), said Markus Weyers, PhD, head of the FBH materials technology department. The FBH currently has 8x3-in. and 11x2 -in. capacity Aixtron systems in operation.

The technology of generating and harnessing light and other forms of radiant energy whose quantum unit is the photon. The science includes light emission, transmission, deflection, amplification and detection by optical components and instruments, lasers and other light sources, fiber optics, electro-optical instrumentation, related hardware and electronics, and sophisticated systems. The range of applications of photonics extends from energy generation to detection to communications and...
Aixtronallium nitrideaNaN-HFETsarkus WeyersBHEDsemiconductorEmploymenterdinand Braunhin filmield-effect transistorsINlanetary Reactorlaser diodeslight sourcesltravioletluminium nitrideNews BriefsphotonicsPhotonics Tech BriefsV-LEDs

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