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Freescale Creates GaAs MOSFET Device

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AUSTIN, Texas, Feb. 3, 2006 -- Freescale Semiconductor has developed what it says is the first device to combine gallium arsenide (GaAs) semiconductor compound performance with the benefits of traditional metal oxide semiconductor field effect transistor (MOSFET) technology and scaling laws.

Freescale's said device enables the development of new classes of power amplifier and low-power, ultrafast semiconductors that significantly shrink the size and boost the performance of end devices.

"The performance improvements could fundamentally change analog-to-digital conversion technology, potentially making such conversions virtually instantaneous," the company said in a statement.

"Freescale's GaAs MOSFET technology holds the promise of having a disruptive impact in the industry," said Asif Anwar, GaAs services director for industry analyst firm strategy analytics. "It offers potential leaps in device performance built upon a foundation of mature manufacturing capabilities."
Silicon-based MOSFET technology forms the bedrock of CMOS, which is the most widely used microelectronic design process and is found in virtually every electronic product. Freescale said prior to this, fundamental scientific limitations prevented the application of industry-standard MOSFET processes, equipment and interconnect methods in GaAs, which is a material that generates less noise and conducts electrons up to 20 times faster than traditional silicon.

"The industry's previous inability to deploy silicon dioxide or ther dielectric materials into GaAs device technologies had prohibited the incorporation of metal oxide gate structures that are critical to the creation of viable GaAs-based MOSFET devices," Freescale said. "Freescale has identified GaAs-compatible materials and devices that provide scaling capabilities on par with traditional silicon materials. This eliminates oxide-semiconductor interface defect issues that had discouraged the creation of high-performance MOSFET devices based on GaAs compounds in the past.

Sumit Sadana, senior vice president of strategy and business development and acting chief technology officer at Freescale, said, "This remarkable achievement overturns industry assumptions and has the potential to fundamentally change the way high-performance semiconductors are designed, manufactured and deployed."

The company said it anticipates that early generations of GaAs-based MOSFET devices will be highly specialized and designed to complement traditional semiconductor technology. Freescale said it will collaborate with partners focused on creating infrastructure, wireless and optoelectronic products requiring extreme computing performance.

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Feb 2006
Freescale SemiconductorGaAsgallium arsenideindustrialmetal oxide semiconductor field effect transistorMOSFETNews & Features

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