Imec, Veeco Team on GaN-on-Si Devices
LOUVAIN, Belgium, and PLAINVIEW, N.Y., Sept. 3, 2013 — Nanoelectronics research center imec of Belgium and chip processing equipment maker Veeco Instruments Inc. are collaborating to lower the cost of producing gallium-nitride-on-silicon (GaN-on-Si)-based power devices and LEDs.
Veeco's metallorganic chemical vapor deposition (MOCVD) equipment is being used at imec to meet the center's development milestones for GaN-on-Si for power and LED applications.
"Our goal is to establish an entire manufacturing infrastructure that allows GaN-on-Si to be a competitive technology,” said imec chief scientist Barun Dutta.
"This technology can be used to create lower-cost LEDs that enable solid-state lighting, more efficient power devices for applications such as power supplies and adapters, PV inverters for solar panels, and power conversion for electric vehicles," said Jim Jenson, senior vice president and general manager of Veeco MOCVD.
For more information, visit: www.imec.be or www.veeco.com
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