Search
Menu
DataRay Inc. - ISO 11146-Compliant Laser Beam Profilers

Photochemical Etching Developed for GaN

Facebook X LinkedIn Email
A wet photochemical etching technique promises to ease the production of devices fabricated from GaN-based materials, which are resistant to most chemical etches and which can display defects when dry-etched. In the March 26 issue of Applied Physics Letters, researchers at the University of California in Santa Barbara describe how they produced 500-µm undercuts in InGaN/GaN heterostructures with the technique.

The group immersed samples in a 2.2-mol KOH solution and exposed them to light from a 1-kW XeHg lamp through their sapphire substrate. The team reported lateral etch rates of up to 10 µm/min and used a lift-off process to remove the samples, which were mechanically polished to a roughness of 5.5 Å.
Zurich Instruments AG - Boost Your Optics 1-24 MR

Published: June 2001
MaterialsResearch & TechnologyTech Pulse

We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.