Search Menu
Photonics Media Photonics Marketplace Photonics Spectra BioPhotonics Vision Spectra Photonics Showcase Photonics ProdSpec Photonics Handbook

QEOS Launches High-Speed Light-Emitting Products

Facebook Twitter LinkedIn Email
MELAKA, Malaysia, April 17, 2013— Quantum Electro Opto Systems Sdn. Bhd. (QEOS) has launched its first commercial OEM/ODM products based on its patented high-speed light-emitting technology known as tilted charge dynamics, the company said last week.

QEOS is headquartered in Malaysia with a US office in Cupertino, Calif. The company was founded in 2008 by Dr. Gabriel Walter (CEO) and University of Illinois professors Nick Holonyak Jr. and Milton Feng, inventors of the tilted charge light-emitting transistor. Professor Holonyak invented the first practically useful visible LED in 1962 and has been called the father of the light-emitting diode.

(left) The proprietary QEOS transmitter optical full assembly (TOFA). (right) Size comparison between a current optical transmitter solution and the QEOS TOFA. Courtesy of PRNewsFoto/Quantum Electro Opto Systems Sdn. Bhd.

Tilted charge dynamics enables the development of products that "are a fraction of the size, power and cost of traditional laser-based products with the comparable functionality" for short-distance optical transmission, Walter said.

"It's incredible to realize this technology features the world's fastest LED," Walter said. "It's ten times faster than the traditional LEDs in the market."

The company is launching the QEOS optical transceiver kit, which includes its transmitter optical full assembly (TOFA) designed to operate with QEOS's receiver optical full assembly (ROFA). It provides a low-power product-ready 3.5 Gb/s for distances up to 100 m and will soon be available for sampling, QEOS said.

A higher-speed QEOS TOFA, an ultralow-power consumption, high-speed optical transmitter operating at up to 6.5 GHz (designed for 10-Gb/s applications) will be available later this year.

For more information, visit:
Apr 2013
An electronic device consisting of a semiconductor material, generally germanium or silicon, and used for rectification, amplification and switching. Its mode of operation utilizes transmission across the junction of the donor electrons and holes.
AmericasAsia-PacificBusinessGabriel Waltergigabitslight sourceslight-emittingMilton FengNick Holonyakoptical transmissionopticsQEOSQuantum Electro Opto SystemsROFAtilted charge dynamicsTOFAtransistorlasersLEDs

back to top
Facebook Twitter Instagram LinkedIn YouTube RSS
©2023 Photonics Media, 100 West St., Pittsfield, MA, 01201 USA, [email protected]

Photonics Media, Laurin Publishing
x We deliver – right to your inbox. Subscribe FREE to our newsletters.
We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.