Close

Search

Search Menu
Photonics Media Photonics Buyers' Guide Photonics EDU Photonics Spectra BioPhotonics EuroPhotonics Vision Spectra Photonics Showcase Photonics ProdSpec Photonics Handbook
More News

Quantum-Dot Infrared Detector Displays Multispectral Operation

Facebook Twitter LinkedIn Email Comments
In the Nov. 1 issue of Applied Physics Letters, engineers at Stanford University in California report the development of a two-color InGaAs quantum-dot infrared photodetector that operates at 5.5 and 9.2 µm at 77 K. Potential applications of the device include temperature sensing, chemical analysis and target discrimination.

The detector comprises 10 layers of N-doped InGaAs quantum dots in an InGaP matrix, sandwiched between GaInP barrier layers and GaAs. The quantum dots display an average radius of 20 nm and an areal density of 3 × 1010/cm2. The researchers fabricated the device by low-pressure metallorganic chemical vapor deposition.

Fourier transform IR spectroscopy revealed that the spectral response of the detector depends on the bias voltage, with its 9.2-µm response peaking at 20.8 V and disappearing beyond 21.2 V. Measured dark currents at various bias voltages were as low as 0.03 pA for 20.1 V. Calculated peak detectivities were 4.7 × 109 cm Hz1/2/W at 5.5 µm and 7.2 × 108 cm Hz1/2/W at 9.2 µm.

Photonics Spectra
Dec 2004
As We Go To PressBreaking Newschemical analysisInGaAs quantum-dot infrared photodetectorPresstime BulletinSensors & DetectorsStanford Universitytarget discriminationtemperature sensing

Comments
back to top
Facebook Twitter Instagram LinkedIn YouTube RSS
©2019 Photonics Media, 100 West St., Pittsfield, MA, 01201 USA, info@photonics.com

Photonics Media, Laurin Publishing
x Subscribe to Photonics Spectra magazine - FREE!
We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.