Search
Menu
Stanley Electric Co. Ltd. - IR Light Sources 4/24 LB

Cree, BU Settle Suit Against AXT

Facebook X LinkedIn Email
DURHAM, N.C. and BOSTON, March 23 -- Semiconductor company Cree Inc. and Boston University (BU) announced they reached a settlement last week in a lawsuit brought against AXT Inc., of Fremont, Calif., in June 2003, alleging infringement of US Patent No. 5,686,738. The parties have agreed to dismissal of all claims and counterclaims. Financial terms were not disclosed. The patent, which Cree licenses from BU, relates to technology developed by Professor Theodore Moustakas for gallium nitride-based buffer layers used with sapphire and other substrates. Cree and the university alleged...Read full article

Related content from Photonics Media



    Articles


    Products


    Photonics Handbook Articles


    White Papers


    Webinars


    Photonics Dictionary Terms


    Media


    Photonics Buyers' Guide Categories


    Companies
    Published: March 2004
    Glossary
    gallium nitride
    Gallium nitride (GaN) is a compound made up of gallium (Ga) and nitrogen (N). It is a wide-bandgap semiconductor material that exhibits unique electrical and optical properties. Gallium nitride is widely used in the production of various electronic and optoelectronic devices, including light-emitting diodes (LEDs), laser diodes, power electronics, and high-frequency communication devices. Key points about gallium nitride (GaN): Chemical composition: Gallium nitride is a binary compound...
    AXTBoston UniversityBUCommunicationsConsumerCreegallium nitrideLight SourcesNews & FeaturesLEDs

    We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.