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New Bandgap Boundaries Could Boost Electronics

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OAK RIDGE, Tenn., Feb. 23, 2012 — A novel layer-by-layer growth technique can achieve a 30 percent reduction in the bandgap of complex metal oxides, bumping up the performance of solar cells, LEDs, displays and other electronic devices. While complex transition metal oxides have for years held promise for a variety of information and energy applications, the challenge has been to devise a method to reduce bandgaps of those insulators without compromising the material’s useful physical properties. The bandgap, a major factor in determining electrical conductivity in a material, directly determines the upper...Read full article

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    Published: February 2012
    Glossary
    bandgap
    In semiconductor physics, the term bandgap refers to the energy range in a material where no electronic states are allowed. It represents the energy difference between the valence band, which is the highest range of energy levels occupied by electrons in their ground state, and the conduction band, which is the lowest range of unoccupied energy levels. The bandgap is a crucial parameter in understanding the electrical behavior of semiconductors and insulators. Here are the key components...
    Americasbandgapbandgap boundariesBasic ScienceCenter for Nanophase Materials SciencesCommunicationscomplex metal oxidesConsumerDepartment of EnergyDisplaysDOEDOE-BESenergyepitaxy techniquegreen photonicsHo Nyung LeeLaboratory Directed Research and Development programlight emitting diodesLight SourcesMichelle BuchananOak Ridge National LaboratoryOffice of ScienceORNLPhysical Sciences DirectoratePresidential Early Career Award for Scientists and EngineersResearch & Technologysolar cellssubnanometer accuracyTennesseethin film crystalsLEDs

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