Aixtron AG of Aachen, Germany, announced it was received an order for an Epigress VP508GFR MOCVD (metal organic chemical vapor deposition) tool from the Institute of Electronic Materials Technology (ITME) in Warsaw, Poland. The system, which is expected to be delivered in the fourth quarter of 2006, will be used for research and pilot production and will enable ITME to further expand its compound semiconductor range into the wide bandgap material silicon carbide (SiC); in particular, to enable the epitaxial growth of n-type and p-type SiC layers for high-power and high-frequency devices, said Wlodek Strupinski, president of ITME's III-V Epitaxy Laboratory. ITME already has an AIX 200 and an AIX 200/4 system for gallium indium arsenide phosphide (GaInAsP) applications, and an AIX 200RF-S for the growth of gallium nitride, for developing optoelectronic and electronic devices.