Chunghwa Leading Photonics Tech (CLPT) provides state-of-the-art wafer processing and device packaging technology for InGaAs photodetector developments. Based on our high quality, high yield and high reliability fabrication ability, we develop products in 1mm~3mm large area photodiode for optical power measurement and 2D focal plane array for SWIR imaging applications.
We have complete solutions for all of your InGaAs photodetector requirements and can provide you with the leading fabrication, packaging, electronics and custom design products, including:
Linear Image Sensor – We just launched our Linear Image Sensor on October 4-6 at Stuttgart Vision 2022. Which has two resolutions 1×1024 and 1×512. 1024 start at 12.5×12.5µm square pixel whereas 512 with 25×250µm tall pixel. Will release more spec soon. Which are suitable for NIR spectroscopy, web inspection, Agriculture Sorting, optical coherence tomography (OCT), NIR scanners, semiconductor inspection and process monitoring.
XSWIR InGaAs Sensor – Based on our mature sensors, VGA and QVGA, we developed and released XSWIR sensors on Q3 2022. With longer wavelength range, the sensors can distinguish different materials in more details and hope to fit more applications need.
Uncooled FPA – The InGaAs Focal Plane Array is the optimized solution for near-infrared imaging and imaging spectrograph applications in 900nm to 1700nm wavelength range. The core technology of CLPT implements the InGaAs FPA with excellent quality. The CLCC package also facilitates the mechanical design of CCD and CMOS camera vendors.
FPA with TE-cooler – The InGaAs Focal Plane Array is the optimized solution for near-infrared imaging and imaging spectrograph applications in 900nm to 1700nm wavelength range. The core technology of CLPT implements the InGaAs FPA with excellent quality. The CLCC package also facilitates the mechanical design of CCD and CMOS camera vendors.
InGaAs PIN Photodiode – Based on the skilled InGaAs processing, CLPT is able to provide a series of high quality large area InGaAs PIN photodiode chips with apertures of 0.5, 1, 2, 3 and 5mm. The short wavelength extended (600~1700nm, -17V) series can cover the light detection waveband in the combination of Si and standard InGaAs detectors. Customer design chip shape, size and aperture are also available.
APD in various package types and models.