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Generation 2 905 nm High-Volume Pulsed Semiconductor Laser Diode

The New Excelitas Generation 2 905 high Volume Pulsed Semiconductor Laser Diode (PLD) emitting at 905 nm in the near infrared features a multi-layer monolithic chip design. With an optical emitting area of (225 x 10) μm by emission of three laser lines, the Generation 2 905 PLD offers high output power in a small emitting area.

Our second-generation 905 nm PLD provides higher efficiency (3 W/A) than its predecessor for further ranging and reduced power consumption. Its improved GaAs structure offers typically 85 W pulsed peak power when driven at 30 A for an increase of more than 20% optical power at the same drive current. The Generation 2 905 nm High-Volume Pulsed Semiconductor Laser Diode is an ideal solution for industrial and consumer range finding and LiDAR applications involving time of flight measurements.

Features include:

   •  Increased output power by more than 20%: customer’s range finder can measure greater distances, or the same distance with reduced power consumption
   •   Triple-cavity design: provides three times the level of optical power compared to a single cavity design
   •  Plastic TO package: cost-effective solution for high volume applicationsMore products