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Photonics Buyers' Guide / Innolume GmbH
Innolume GmbH

Innolume GmbH

MapKonrad-Adenauer-Allee 11
D-44263 Dortmund
Phone: +49 231 47730 200
Fax: +49 231 47730 250
Innolume has a complete integrated solution for fabrication of a broad assortment of GaAs-based optoelectronic devices in the wavelength range of 780 to 1330 nm.

Two production scale MBE reactors allow for design flexibility and material choice of (In,Al) GaAs (P,N) /GaAs system. Conventional (In, Al) GaAs quantum well structures cover the standard wavelength range of 780 to 1180 nm whereas proprietary InAs Quantum Dot technology extends the attainable range all the way up to 1350 nm.

Full in-house wafer processing ensures smooth production of a wide variety of standard products and fast development cycles for customized solutions.

Proprietary surface passivation technology applied to the cleaved facets ensures outstanding lifetime figures for a complete spectrum of our high power products. Finely controlled optical layers deposition allows attaining of extremely deep (<0.01% reflection) antireflection coating on cleaved facets, which is crucially important for low nose performance of our Gain Chips in external cavity and for low spectral ripples of our SOA and SLD products.

In-house bonding and packaging capabilities allow for fast prototyping and low-scale production of wide range of products from bare chips or chip-on different types of carrier all the way up to complex packaging solutions like fiber-coupled butterfly package with free-space output.
Established: 2003
Ownership type: Privately Owned
Daniil Libshits, CEO
Alexey Shkolnik, Dir. Bus. Dev.

lasers1064nmQuantum Dotsfiber coupledtapered amplifiersSOASLDgain chipsingle mode1178 nmlaser diodesdiode lasersDFBtunable sourcesbroadband amplifierscomb sourcesepi waferslaser diode driversuperluminescent diodediode lasers
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