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Narrow-Angle, High-Temp IR Emitter: OD-850FHT
Narrow-Angle, High-Temp IR Emitter: OD-850FHT
Opto Diode Corporation, United States
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High-temperature GaAIAs IR Emitters feature: -High optical output -850 nm peak emission -Hermetically-sealed TO-46 -Narrow angle for long-distance applications -Extended operating temperature range -No internal coatings -No derating or heat sink required to 80 °C
Applications: Biomedical/Medical, Industrial, Military, Scientific Research, Other
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 22mW
  • Half Intensity Beam Angle (degrees): 8
  • Forward Voltage (V): 1.6
  • Forward Current: 300mA
  • Operating Temperature (°C): -65 - 150

Wide-Angle, High-Temp IR Emitter: OD-850WHT
Wide-Angle, High-Temp IR Emitter: OD-850WHT
Opto Diode Corporation, United States
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High-power GaAlAs IR Emitters feature: -High optical output -850 nm peak emission -Hermetically-sealed TO-46 -Wide emission angle to cover a large area -Extended operating temperature range -No internal coatings -No derating or heat sink required to 80 °C
Applications: Biomedical/Medical, Industrial, Military, Scientific Research, Other
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 26mW
  • Half Intensity Beam Angle (degrees): 80
  • Forward Voltage (V): 2
  • Forward Current: 300mA
  • Operating Temperature (°C): -65 - 150

High-Power GaAlAs IRLED Illuminator: OD-669
High-Power GaAlAs IRLED Illuminator: OD-669
Opto Diode Corporation, United States
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Ideal for surveillance or night vision, Opto Diode's very-wide-angle emitter features high reliability, and the highest power output available with 880 nm peak emission. Nine chips are connected in series in an electrically-isolated case.
Applications: Industrial, Military, Other
  • Type: Other
  • TO Package: Other
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 880 - 880
  • Power Output: 500mW
  • Half Intensity Beam Angle (degrees): 120
  • Forward Voltage (V): 13.5
  • Forward Current: 400mA
  • Operating Temperature (°C): -55 - 100

High-Power GaAlAs IRLED Illuminator: OD-669-850
High-Power GaAlAs IRLED Illuminator: OD-669-850
Opto Diode Corporation, United States
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Ideal for night vision illumination. The OD-669-850 emitter features an ultra-high optical output and very uniform optical beam. The standard 2-lead TO-66 electrically-isolated package makes this ideal for night vision applications.
Applications: Industrial, Military, Other
  • Type: Other
  • TO Package: Other
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 1250mW
  • Half Intensity Beam Angle (degrees): 120
  • Forward Voltage (V): 14.4
  • Forward Current: 370mA
  • Operating Temperature (°C): -40 - 100

Wide Angle, High-Temp GaAIAs IR LED- OD-110WISOLHT
Wide Angle, High-Temp GaAIAs IR LED- OD-110WISOLHT
Opto Diode Corporation, United States
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High-Temperature, Wide-Angle IRLEDs feature: -Wide temperature rating -880 nm peak emission -2-Lead,TO-39 package -Ideal for high-temperature industrial applications -Isolated Case -RoHS and REACH compliant
Applications: Biomedical/Medical, Industrial, Military, Scientific Research, Other
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 880 - 880
  • Power Output: 140mW
  • Half Intensity Beam Angle (degrees): 110
  • Forward Voltage (V): 2
  • Forward Current: 500mA
  • Operating Temperature (°C): -65 - 150

Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-250
Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-250
Opto Diode Corporation, United States
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Wide Angle, Super-High-Power High GaAlAs IR Emitters feature: -Very uniform optical Beam -Four wire bonds on die corners -Chip Size: 0.026" x 0.026" -Standard 3-Lead TO-39 Hermetic package -
Applications: Biomedical/Medical, Industrial, Military, Scientific Research, Other
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 250mW
  • Half Intensity Beam Angle (degrees): 110
  • Forward Voltage (V): 2
  • Forward Current: 500mA
  • Operating Temperature (°C): -40 - 100

Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-110W
Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-110W
Opto Diode Corporation, United States
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High Temperature GaAlAs IR Emitters feature: -Wide Temperature rating -880 nm peak emission -2-Lead,TO-39 package -Narrow angle of emission -Isolated Cse -RoHS and REACH compliant
Applications: Biomedical/Medical, Industrial, Military, Scientific Research, Other
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 140mW
  • Half Intensity Beam Angle (degrees): 110
  • Forward Voltage (V): 2
  • Forward Current: 500mA
  • Operating Temperature (°C): -40 - 100

High Temp GaAIAs IR Emitter: OD-110LISOLHT
High Temp GaAIAs IR Emitter: OD-110LISOLHT
Opto Diode Corporation, United States
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High Temperature GaAlAs IR Emitters feature: -Wide Temperature rating -880 nm peak emission -2-Lead,TO-39 package -Narrow angle of emission -Isolated Cse -RoHS and REACH compliant
Applications: Biomedical/Medical, Industrial, Military, Scientific Research, Other
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 880 - 880
  • Power Output: 100mW
  • Half Intensity Beam Angle (degrees): 7
  • Forward Voltage (V): 2
  • Forward Current: 500mA
  • Operating Temperature (°C): -65 - 150

High-Power GaAlAs IRLED Illuminator: OD-666
High-Power GaAlAs IRLED Illuminator: OD-666
Opto Diode Corporation, United States
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Ideal for surveillance or night vision, Opto Diode's emitters feature high reliability, ultra-high-power output. Six chips are connected in series in an electrically-isolated case.
Applications: Industrial, Military, Other
  • Type: Other
  • TO Package: Other
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 880 - 880
  • Power Output: 330mW
  • Half Intensity Beam Angle (degrees): 120
  • Forward Voltage (V): 9
  • Forward Current: 400mA
  • Operating Temperature (°C): -55 - 100

Medium-Angle, High-Power IR Emitter: OD-850L
Medium-Angle, High-Power IR Emitter: OD-850L
Opto Diode Corporation, United States
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High-power GaAIAs IR Emitters feature: -High optical output -850 nm peak emission -Hermetically-sealed TO-46 package -Medium emission angle for best coverage/power density
Applications: Biomedical/Medical, Industrial, Military, Scientific Research, Other
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 35mW
  • Half Intensity Beam Angle (degrees): 35
  • Forward Voltage (V): 2
  • Forward Current: 300mA
  • Operating Temperature (°C): -40 - 100




1-10 of 27 items  123
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