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High Temp GaAIAs IR Emitter: OD-110LISOLHT

  • Model: High Temp GaAIAs IR Emitter: OD-110LISOLHT
  • Company: Opto Diode Corporation
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 880 - 880
  • Power Output: 100mW
  • Half Intensity Beam Angle (degrees): 7
  • Forward Voltage (V): 2
  • Forward Current: 500mA
  • Operating Temperature (°C): -65 - 150
  • Applications: Biomedical/Medical, Industrial, Military, Scientific Research, Other
  • Lead Soldering Temperature: 260 °C
  • Reverse Voltage: 5 V
  • Spectral Bandwidth @50%: 55 nm
  • Rise Time: 20 nsec
  • Fall Time: 20 nsec

High Temperature GaAlAs IR Emitters feature:

-Wide Temperature rating
-880 nm peak emission
-2-Lead,TO-39 package
-Narrow angle of emission
-Isolated Cse
-RoHS and REACH compliant
High Temp GaAIAs IR Emitter: OD-110LISOLHT

Opto Diode Corporation
1260 Calle Suerte
Camarillo, CA 93012
United States
Phone: +1 805-499-0335
Fax: +1 805-499-8108
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