Search
Menu
Photonics ProductsIlluminationLEDs & EmittersThrough Hole

Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-250

  • Company: Opto Diode Corporation
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 250mW
  • Half Intensity Beam Angle (degrees): 110
  • Forward Voltage (V): 2
  • Forward Current: 500mA
  • Operating Temperature (°C): -40 - 100
  • Applications: Biomedical/Medical, Industrial, Military, Scientific Research, Other
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
  • Spectral bandwidth @50%: 40 nm
  • Rise time: 20 nsec
  • Fall time: 20 nsec
  • Reverse Breakdown Voltage: 30 V

Wide Angle, Super-High-Power High GaAlAs IR Emitters feature:

-Very uniform optical Beam
-Four wire bonds on die corners
-Chip Size: 0.026" x 0.026"
-Standard 3-Lead TO-39 Hermetic package
-
Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-250

Opto Diode Corporation
1260 Calle Suerte
Camarillo, CA 93012
United States
Phone: +1 805-499-0335
Fax: +1 805-499-8108
We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.