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GaN HEMT Epiwafers

  • Model: GaN HEMT Epiwafers
  • Company: NTT Advanced Technology Corp.
  • Type: Wafers
  • Applications: Astronomy, Biomedical/Medical, Communications, Industrial, Scientific Research, Other
  • Substrates: Epitaxial growth on Si, SiC, Sapphire and GaN
  • Si: 3-8 inch
  • Sapphire: 2-3 inch
  • SiC: 2-6 inch
  • GaN: 2-4 inch

GaN HEMT epiwafers with low leakage current, enabled by our original buffer growth technique.
Over the past 10 years, NTT-AT GaN epitaxial wafers have good track record for both industrial and academic customers.
8-inch GaN on Silicon is also available with the same quality as 6-inch cases on request.
We can also provide device manufacturing and material analysis.
GaN HEMT Epiwafers

NTT Advanced Technology Corp.
Tokyo Opera City Tower
3-20-2, Nishi-shinjuku
Shinjuku, Tokyo 163-1436
Phone: +1 408-474-0214
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