Close

Search

Search Menu
Photonics Media Photonics Marketplace Photonics Spectra BioPhotonics Vision Spectra Photonics Showcase Photonics ProdSpec Photonics Handbook
LaCroix Precision Optics - Lacroix Precision Optics

GaN HEMT epiwafers

  • Model: GaN HEMT epiwafers
  • Company: NTT Advanced Technology Corporation
  • Type: Wafers
  • Applications: Astronomy, Biomedical/Medical, Communications, Industrial, Scientific Research, Other
  • Substrates: Epitaxial growth on Si, SiC, Sapphire and GaN
  • Si: 2-8 inch
  • Sapphire: 2-3 inch
  • SiC: 2-6 inch
  • Gan: 2-4 inch

GaN HEMT epiwafers with low leakage current, enabled by our original buffer growth technique.
Over the past 10 years, NTT-AT GaN epitaxial wafers have good track record for both industrial and academic customers.
8-inch GaN on Silicon is also available with the same quality as 6-inch cases on request.
We can also provide device manufacturing and material analysis.
GaN HEMT epiwafers

NTT Advanced Technology Corporation
Tokyo Opera City Tower
3-20-2, Nishi-shinjuku
Shinjuku, Tokyo 163-1436
Japan
Phone: +1 408-474-0214
back to top
Facebook Twitter Instagram LinkedIn YouTube RSS
©2022 Photonics Media, 100 West St., Pittsfield, MA, 01201 USA, [email protected]

Photonics Media, Laurin Publishing
x Wish you were here? Click to become an exhibitor today.
We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.