HEM Sapphire Substrates
- Model: HEM Sapphire Substrates
- Company: GT Advanced Technologies, Advanced Materials Group
- Type: Wafers
- Diameter / Dimension: 50.8mm - 100mm
- Applications: Biomedical/Medical, Communications, Industrial, Military, Scientific Research
- Diameter: 2" to 4"
- Thickness: 0.332 mm to 0.650 mm
- Surfaces: 1 side Epi, 2 sides Epi
- Cleanliness: "Epi Ready"
HEM sapphire, high-purity, low etch pit density, uniform crystalline structure and no bubbles or inclusions makes it an ideal host for heteroepitaxial deposition. Our substrates are epi polished to Ra surface values of < 0.1 nm with low bow and warp. HEM sapphire substrates have been used to manufacture high brightness and efficiency LEDs and LDs.
27 Congress St.
Salem, MA 01970
United States
Phone: +1 978-745-0088
Fax: +1 978-744-5059