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HEM Sapphire Substrates

Name: HEM Sapphire Substrates
Brand: GT Advanced Technologies, Advanced Materials Group

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GT Advanced Technologies, Advanced Materials Group

27 Congress St.
Salem, MA 01970
United States

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Phone: +1 978-745-0088
Fax: +1 978-744-5059

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GT Advanced Technologies, Advanced Materials Group

HEM Sapphire Substrates

Type: Wafers
Diameter / Dimension: 50.8mm - 100mm
Applications: Biomedical/Medical, Communications, Industrial, Military, Scientific Research
Diameter: 2" to 4"
Thickness: 0.332 mm to 0.650 mm
Surfaces: 1 side Epi, 2 sides Epi
Cleanliness: "Epi Ready"
Data Sheet

HEM sapphire, high-purity, low etch pit density, uniform crystalline structure and no bubbles or inclusions makes it an ideal host for heteroepitaxial deposition. Our substrates are epi polished to Ra surface values of < 0.1 nm with low bow and warp. HEM sapphire substrates have been used to manufacture high brightness and efficiency LEDs and LDs.

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HEM Sapphire Substrates