PIN Photodiodes Series 5t
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Phone: +49 30 639923 99
Fax: +49 30 639923 33
- Type: Other
- Active Area: 0.25 mm²
- Dark current: 0.01 nA
- Rise time: 0.4 ns
This range of high-speed epitaxial photodiodes is designed specifically for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components.
Special features include photodiodes with epitaxial layer structure for fast rise times at low reverse voltages, and low operating voltage – fully depleted at 3.5 V.
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